栅极变压器
3.A highly evacuated electron tube containing an anode, a cathode, and a control grid
6.The gate length of SIT is 0.13 micron and the distance between source and drain is 0.5 micron.
7.A tetrode with grid and plate potentials so arranged that plate current decreases when plate potential increases.
8.A network or coil of fine wires located between the plate and the filament in an electron tube.
9.Secondary Electron Emission from Surface of Novel Gate Structure in CNT-FED
10.A description of recent work to make three-terminal Josephson devices which have normal metal grid with YBCO superconducting thin films is given in this paper. The change in the, curves of DC I-V characteristics is sharper than that of a microbridge.
