back contact
10.Using microelectronic flat procedure, with electronic beam evaporating (EBE) Al on the Si substrate back as ohmic contact, oxidizing and photoetching active region on the p epitaxial layer, sputting Al-doped ZnO thin film and EBE Al on it as ohmic contact, n-ZnO/p-Si heterojunction UV enhanced photodetectors were fabricated. The I-V characteristics, spectrum response and photoluminescence(PL) characteristics were tested and analyzed.

