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1.C-BN FILMS FORMED ON SUBSTRATE FE PERMEATED BY BORON WITH THE HELP OF HOT FILAMENT ASSISTED R. F PLASMA CVD
铁衬底上利用热丝辅助r.f等离子体CVD法生长C-BN薄膜收藏指正
2.Diamond,diamond/TiC composite and boron doped diamond films were deposited by plasma assistant hot-filament chemical vapor deposition(PAHFCVD).
采用等离子辅助热丝化学气相沉积(PAHFCVD)装置进行了金刚石薄膜、碳化钛/金刚石复合膜、掺金刚石薄膜的制备。收藏指正
3.Covalently-bonded light element boron carbonitride(BCN) compounds show interesting properties between those of semimetals and wide-gap semiconductors depending on their chemical composition and atomic enviroment. Micro-size BCN rods 20μm in diameter and 100μm in length were synthesized by bias-assisted hot filament chemical vapor deposition. The chemical composition and bonding states were studied by energy dispersive X-ray analysis and X-ray photoemission spectroscopy.
轻元素共价键碳氮(BCN)化合物随组分和原子环境的变化,表现了由半金属到宽带隙半导体之间可调的物理性质.利用偏压辅助的热丝化学气相沉积方法,成功地制备了直径为20μm、长度为100μm的微米量级BCN棒,并进一步研究了它的化学成分和原子键态收藏指正
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