boundary films
1.MOCVD and RAT were applied to fabricate the amorphous Bi 4Ti 3O 12 ferroelectric thin film on Si<100> substrate,and the phase structure evolution of the films were analyzed with the XRD and SEM techniques. The hysteretic loop of the thin films was measured systematically. The annealing time has great effect on the film ednsification,the combination of grain boundary and ferroelectric properties of BTO thin films.
3.The microstructure observation in the microfissures suggests the liquation microcrack results from grain boundary liquation by constitutional liquation of MC carbides and formation of continuous and or semi-continuous low melting liquid films, however, the occurrence of the solid state microcracks can be attributed to the effect of ultrafast transit thermal shock introduced by high energy electron beam.
