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1.By using the molecular beam epitaxy (MBE) and plasma assisted MBE with oxygen atmosphere, the ZnO thin films were deposited on Si(100),GaAs(100) and Al 2O 3 (0001) substrates with Zn,ZnS,or Zn O buffers respectively,under different temperatures of beam source and of substrate. The buffer layer is necessary for preparation of ZnO thin film, in order to minimize the effect of mismatch of crystal lattice between substrates and ZnO.
利用分子束外延 (MBE)和氧等离子体源辅助MBE方法分别在Si(1 0 0 )、GaAs(1 0 0 )和蓝宝石Al2 O3(0 0 0 1 )衬底上用Zn、ZnS或以一定Zn O化学计量比作缓冲层 ,改变衬底生长温度和氧压 ,并在氧气氛下 ,进行原位退火处理 ,得到ZnO薄膜。收藏指正
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