compound semiconductor
2.Zinc oxide is a II-VI wide band-gap (3.3eV) compound semiconductor with wurtzitecrystal structure.
3.Zinc oxide is a II-IV wide band-gap ( Eg=3.37eV ) compound semiconductor with wurtzite crystal structure.
4.Zinc oxide is a II-IV wide band-gap (3.37eV) compound semiconductor with wurtzite crystal structure.
5.ZnO is a II-VI compound semiconductor with a wide direct bandgap of 3.3eV atroom temperature, exciton binding energy of 60meV, and a hexagonal wurtzite structureof space group P63mc.
6.ZnO is a II-VI compound semiconductor with a wide direct band gap of 3.37eV atroom temperature, a large exciton binding energy of 60meV, and a hexagonal wurtzitestructure.
7.ZnO is a II-VI compound semiconductor which has many potential applications in short-wavelength optoelectronic devices, including light emitting diodes (LEDs) and laser diodes (LDs), ultraviolet detectors, high frequency and high power devices etc.
8.ZnO is a II -VI compound semiconductor with a wide direct band gap of 3.3 eV and a hexagonal wurtzite structure. It has large exciton bingding energy of 60 meV and a high optical gain at room temperature, which promises a very strong violet luminescence from bound excitonic emissions.
9.Study on the Photo-catalytic Degradation of Surfactant and the Print-dyeing Wastewater by Semiconductor Compound System
10.High purity gallium metal is the basic ingredient for semiconductor compound material, and it is also highly utilized in the manufacture of super conductor material, alloy, alnico etc.
