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2.Study on Micro-crystallization of Cadmium Mercury Thiocyanate (CMTC) Crystal for Laser Diode Frequency Doubling
半导体激光倍频晶体硫氰酸汞镉(CMTC)显微结晶的研究收藏指正
3.The display may be liquid crystal or light emitting diode.
可以采用液晶或发光二极管显示。收藏指正
4.Crystallization behavior and habits of cadmium mercury thiocyanate (CMTC) crystal for laser diode frequency doubling in KCl/H 2O solvent systems with different KCl concentrations were observed and investigated by means of micro crystallization experiments.
采用显微结晶 ,系统地观察、研究了半导体激光 (LD)倍频材料CMTC晶体在KCl/H2 O的溶剂体系中 ,不同条件下的结晶习性。收藏指正
5.The optical properties of Nd∶YVO4/YVO4 composite crystal and Nd∶YVO4 single crystal were studied contrastedly in the high power laser diode-pumped solid-state lasers.
在高功率激光二极管(LD)抽运的情况下,对比分析了Nd∶YVO4/YVO4复合晶体和Nd∶YVO4单一晶体的激光特性。收藏指正
6.Laser diode direct coupling pumped Nd∶YVO 4/KTP intracavity frequency doubling laser was demonstrated by closing the Nd∶YVO 4 crystal to the emitting area of laser diode. Green laser of TEM 00 mode at 532 nm with a maximum output of 73 mW and a optical to optical efficiency of 14.5% were obtained, when pump power was 503 mW.
使激光二极管的发光面紧贴NdYVO4激光晶体，“面对面”直接耦合泵浦，采用KTP晶体腔内倍频，在503mW的泵浦功率下，获得532nm基横模绿光输出约73mW，光光总体转换效率为14．5％。收藏指正
7.Nd:FAP crystal was pumped by a SDL-2480-H1 laser diode with pulse power of 1313 mW and pulse width of 400 μs at a repetition rate of 50 Hz.
用脉宽为400μs，峰值功率为1313mW，重复频率为50Hz的激光二极管泵浦自行研制的Nd：FAP晶体，获得平顶峰值功率为157mW的激光输出。收藏指正
8.Based on the analytical theory of aeolotropy,the thermal distortion of pumped-face and the temperature field distribution of laser crystal are investigated when Nd:YVO4 crystal with rectangular cros section is end-pumped by a laser beam of Gaussian distribution from a diode laser.
基于解析各向异性分析理论,研究了矩形横截面Nd:YVO4激光晶体受到具有高斯分布LD端面抽运时的激光晶体温度场分布和抽运面热形变分布。收藏指正
9.A blue violet laser is described by direct laser diode frequency doubling with a new nonlinear organometallic complex CMTC crystal.
报道了用新型络合物非线性光学材料硫氰酸汞镉（CMTC）晶体实现激光二极管室温下直接倍频，产生蓝紫光激光输出。收藏指正
10.The LaB6/GaAs Schottky barrier made by electron beam evaporation from LaBe single crystal source exhibits the ideal factor of 1.15-1.2 and the barrier height of 0.70eV when the Schottky diode being annealed at 800℃.
用电子束蒸发LaB_6单晶的方法,制备了LaB_6/GsAs肖特基势垒,经800℃高温退火后,势垒高度为0.70eV,理想因子为1.15～1.2。收藏指正
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