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1.PLASMA-ENHANCED CVD SILICON NITRIDE AS ANTIREFLECTION COATING OF SILICON SOLAR CELLS
等离子体增强CVD氮化硅作硅太阳电池的减反射膜收藏指正
2.Photo-CVD of Silicon Nitride and Its Application-(Ⅲ)The Thin Film of Photo-CVD Silicon Nitride to Raise the Reliability of Devices
光化学气相淀积氮化硅的工艺及其应用研究——(Ⅲ)光CVD氮化硅薄膜应用于提高器件可靠性收藏指正
3.An Experimental Study of Chemical Vapour Deposition (CVD) of Silicon Carbide
化学气相沉积(CVD)碳化硅厚膜的实验研究收藏指正
4.Thermodynamics of CVD of silicon carbide was studied and theH 2 MTS, Ar SiO C, H 2 SiO C xH y,H 2 SiH 4 C xH y systems were calculated The influence of temperature, pressure, carrier gas ratio and gas concentration of reactant on the deposition of single-phase silicon carbide was evaluated and the calculated results were presented as CVDphase diagrams
对化学气相沉积（CVD）法制备SiC的热力学进行了系统研究，考察了H2－MTS，Ar－SiO－C，H2－SiO－CxHy，H2－SiH4－CxHy等体系，着重研究了温度、压力、载气量和初始反应气体浓度对沉积单相SiC的影响，以CVD相图的形式给出了计算结果，这些相图对CVD法制备SiC的实验具有指导作用．收藏指正
5.PROCESS AND EQUIPMENT OF CVD METHOD FOR 6. 5% SILICON STEEL
CVD法生产6.5％Si钢的工艺及设备收藏指正
6.UHV/CVD Si epitaxial growth on porous silicon has been reported.
报道了采用超高真空化学气相淀积 ( UHV/CVD)在多孔硅层上的单晶硅外延技术 .收藏指正
7.Laser Raman Spectra Analysis of Defects in CVD Diamond Films Deposited on Silicon Substrate
金刚石薄膜缺陷的激光拉曼光谱分析收藏指正
8.Studies on the CVD Growth of Carbon Nanotubes on Silicon/Silica Substrates
碳纳米管在硅基衬底上的化学气相沉积生长研究收藏指正
9.Comparison with the transient response of CVD a-Si and silicon PIN fast photoelectric detector shows that the transient response of a-Si has good stability.
与化学气相沉积a-Si和进口硅PIN快速光电探测器的瞬态响应实验结果的比较说明,a-Si的瞬态响应稳定性好。收藏指正
10.A Study on Intrinsic Silicon Epitaxy by UHV/CVD
UHV/CVD生长本征硅外延层的研究收藏指正
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