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2.depth bomb; diving torpedo; depth charge;
水炸弹收藏指正
3.Theaternet is a local(Hong Kong) e-network that intends to provoke more in-depth dialogues between theatre critics(The One in-charge: Siu Sai).
「剧联网」是一个旨在引发更多本地(香港)剧评人之间的深度交流、对话与讨论的电子网络(坛主:小西)。收藏指正
4.Through a lot of small scale simulated tests in construction field, this paper systemically analyzed the dependence of the open area and visible depth of blasting craters, the thrown distance and the accumulation state of rock on the row spacing and the column spacing of plane charge.
本文通过在施工现场进行的大量小型模拟实验,对平面药包间、排距与爆破漏斗的开口面积、可见深度、爆岩的抛掷距离和堆积形态等关系进行了系统分析与研究。收藏指正
5.Deviation of k_(cor) of the dose measystem,the correction fact0r of neutron absorbed dose in integrated charge-stan-dard phantom,was ±0.63%,when the standard source-skin distance was 137.3cm,standardbeam field size 9 cm×9 cm and the depth 9 cm.
其剂量测试系统的监测室积分电荷-标准体模内中子吸收剂量校正因子k_(cor)值,在标准源皮距(137,3cm)、标准射野(9cm×9cm)和深度9cm条件下测得,在半年内20次测量的相对标准差为±0.63%。收藏指正
6.In this paper a technigue of constructiug CMOS P-well retrograde structure with an medium-current implantor (Eaton NV-3204 with 20-200keV beam energy range) is reported. By utilizing double-charge ion implantation, 400 keV ion energy can be reached which provides B atomic profile with mean projected range Rp=1.0um and junction depth Xj = 2.0um.
本文从VLSl CMOS倒阱意义出发,结合我所中能离子注入的双电荷产生及其应用研究,介绍了在NV—3204注入机上实现近400keV的B受主高能注入以形成单峰(约1.0μm)、阱(约2.0μm)的P倒阱。收藏指正
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