distributing channel
1.The effects of Ge distributing, thickness of super thin gate electric (SiO2 ) and Si cap layer thickness in GeSi channel on GeSi-PMODMOS characteristic,on the basics of analyz- ing PMODMOS structure and device physics are analyzed.
2.Using techniquessuch as direct sampling by resistance voltage-distributing, A/D converting with high accuracy, and photoelectric isolating, etc, we can implement effectively a computer on slice forward-channel, and with thehelp of designed software, we can easily supply the AC parameters in the current network for miro-computers.
