爱词霸英语   汉语   手机版   软件版下载 | English
每日一句:正在加载...
1.COMPUTER-AIDED ANALYSIS OF DOUBLE-DRIFT-REGION IMP ATT DIODE
双漂移(P~+PNN~+)雪崩二极管的计算机辅助分析收藏指正
2.A PROPOSAL OF DOUBLE HETEROJUNCTION DOUBLE DRIFT-REGION InP/InGaAsP/InP AVALANCHE DIODE
双异质结双漂移区InP/InGaAsP/InP微波雪崩二极管的设想收藏指正
3.Breakdown Voltage Analysis for a Novel SOI Structure with Step Thickness Drift Region
阶梯厚度漂移区SOI新结构耐压分析收藏指正
4.Research on Breakdown Mechanism of High Voltage SOI RESURF Structure with Step Doping Drift Region
阶梯变掺杂漂移区高压SOI RESURF结构耐压机理研究收藏指正
5.An Analytical Model for Optimizing SOI High Voltage Device with Step Doping Profile in Drift Region
阶梯掺杂漂移区SOI高压器件浓度分布优化模型收藏指正
6.A novel SOI LDMOS structure with step thickness drift region is proposed, in this structure the drift region is divided into different parts with thickness increasing from source to drain, electric field distribution is improved due to modulation effect of step drift region, and therefore the breakdown voltage is increased.
本文提出了一种阶梯厚度漂移区SOI LDMOS新结构,此结构将漂移区分成厚度由源到漏依次增加不同的区域,利用阶梯型漂移区对电场的调制作用改善电场分布,从而提高器件击穿电压。收藏指正
7.Primary Exploration on Realizability of New Structures in Thinned Drift Region of DRT MC SOI LIGBT
DRT MC SOI LIGBT器件漂移区新结构的可实现性收藏指正
8.A novel structural thin film SOI LIGBT——drift region thinned multi channel thin film SOI LIGBT(DRT MC TFSOI LIGB)——is presented.
提出了一种新结构薄膜 SOI L IGBT——漂移区减薄的多沟道薄膜 SOI LIGBT( DRT-MC TFSOI L IGB)。收藏指正
9.During SST raise stage in the equatorial central and eastern Pacific and North Pacific westerly drift region, serious droughts and floods easily happen in the North China Plane, respectively.
在赤道中东太平洋海温与北太平洋西风漂流区海温处于明显正距平阶段 ,华北平原地区易分别发生严重干旱与雨涝。收藏指正
10.The characteristics of the LDMOS with a linearly graded drift region doped profile have been demonstrated by the 2D semiconductor simulator MEDICI and verified by our experimental results.
用二维器件软件MEDICI对具有线性变化掺杂漂移区的RESURFLDMOS晶体管的性能进行了数值分析并由实验对其结果进行了验证 .收藏指正
尝试查询
汉英释义