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1.Far UV Emission Band of Hg_2 Excimer
Hg_2准分子远紫外发射谱带研究收藏指正
2.PHOTOLUMINESCENCE STUDY ON 0.77 eV EMISSION BAND OF SEMI-INSULATING GaAs
半绝缘砷化镓中0.77eV荧光带的研究收藏指正
3.INVESTIGATION OF DAP TRANSITION NATURE OF 1.18eV EMISSION BAND IN InP:Mn
掺锰磷化铟中1.18eV辐射的施主受主对辐射性质的研究收藏指正
4.The red emission band indicates the local structure of luminescence center is quite similar with the traditional long-afterglow phosphor CaS∶Eu2+Cl-.
红光发射带为硫元素进入晶格后在发光中心周围形成了类似长余辉材料CaS∶Eu2+,Cl-的局域结构。收藏指正
5.The PL spectrum excited with the 210 nm of a Xe lamp at room temperature revealed a strong green emission band centered at about 500 nm with FWHM about 90 nm and a weaker near UV emission band centered at about 380 nm with FWHM about 15 nm.
用He-Cd激光器的325 nm激光对四脚状样品进行发射光谱分析,发现其近紫外激子发光大大增强而绿色缺陷发光相对较弱,近紫外的峰值位于383 nm,半峰全宽约为16 nm;收藏指正
6.The photoluminescence (PL) result showed that there exists a broad emission band which ranges from 500 nm to 700 nm, centered at 567 nm.
荧光测试结果表明,氮化硅纳米线的发光有一个宽的发光带(波长从500-700 nm),发光峰位于567 nm.收藏指正
7.The PL spectrum excited with 325 nm of He-Cd laser at room temperature revealed a strong and narrow near UV emission band centered at about 383 nm with FWHM about 16 nm and a weaker broad emission band centered at(about) 515 nm with FWHM about 76 nm.
绿峰峰值位于515 nm,半峰全宽约为76 nm。收藏指正
8.Purified CCI complex contained only 66 and 56 kDa peptides, and its main fluorescence emission band at 77K was at 714～715 nm.
纯化的CCI复合物只含有66和56kDa多肽 ,荧光发射主峰在714～715nm ;收藏指正
9.The superimposition of the above-mentioned three bands leads to a wide band at 440nm, which accounts for the reason that the peak wavelength of PL emission band is shorter than that of absorption band is not quantum size effect but the existence of the complex clusters in the surface of CdS nanorods.
上述三个发射峰的叠加而形成的峰位大约在440nm左右,从而阐明了许多文献中观察到的硫化镉纳米棒的发射峰小于其吸收峰的原因是硫化镉纳米棒表面存在络合体,而非文献中提出的量子效应。收藏指正
10.The PL spectrum of Zn_2SnO_4 nanowires at room temperature shows a broad blue emission band centered at a wavelength of 580 nm. 3. Synthsis and photoluminescence properties of Sn:Ga_2O_3 nanostructures.
在室温下的Zn_2SnO_4纳米线光致发光谱显示,该种纳米材料具有一个较宽的发光带,发光峰中心的峰值为580nm。收藏指正
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