equivalent thickness
2.The influence of the thickness of SiO2 and La2O3 on the tunneling current is given to compare much different thickness of SiO2 and La2O3 tunneling current on the same equivalent oxide thickness (EOT) condition.
3.The MOS capacitor with Al 2O 3 dielectric of 3 .45nm equivalent oxide thickness (EOT) is fabricated by reactive sputter.
4.The negative-bias temperature instability (NBTI) characteristics of HfN/HfO_2 gated p-MOSFET with equivalent oxide thickness (EOT) of 1.3nm and low pre-existing traps are studied.
5.By complementing the equivalent oxide thickness (EOT) of a 1.7nm nitride/oxynitride (N/O) stack gate dielectric (EOT=1.7nm) with a W/TiN metal gate electrode,metal gate CMOS devices with sub-100nm gate length are fabricated in China for the first time.
6.The flat band voltage(VFB) and Equivalent Oxide Thickness(EOT) data were determined by fitting the measured capacitance-voltage(C-V) curves with simulation curves. The results show that work functions of NiSi gates with and without Ge implantation vary slightly,less than 0.03eV.The increase of interface state and fixed oxide charge introduced by Ge preamorphization implantation is not observed.
7.The article describes the shape of wind load on the radome surface and analyzes the internal force of the radome with nonmomental theory of shell, stresses and stability with theoretic formula, equivalent modulus of elasticity and thickness of A-sandwich-composite structure.
8.Equivalent heat conductivity of PWB is related to the thickness of PWB,the residual ratio of copper foil and the thickness of copper foil.
9.The resuits showed that the board with 4～6cm in thickness was fully penetrated by TWP with a loading of BAE (Boric Acid Equivalent) over 0.2% (w/w) in the outer part with a thickness of 15mm.
10.The results showed that the maximal equivalent stress was located interface of titanium alloy and Ni when the hardened Layer thickness was 0.25～1.25 mm,which was easy to generate crack;
