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1.A full cycle can be subdivided into three sub stages: liquid refilling stage, bubble nucleation, growth, coalescence and explosion stage, and transient liquid film evaporation stage.
1个完整的周期可以分成3个子过程:进液阶段,汽泡核化、增长、聚合及爆炸阶段,瞬变液膜蒸发阶段。收藏指正
2.ITO Thin Film Deposition by ECR Plasma Enhaced Reactive Evaporation
微波ECR等离子体辅助反应蒸发沉积ITO膜收藏指正
3.LaB_6 FILM DEPOSITED ON GaAs BY ELECTRON BEAM EVAPORATION AND ITS INTERFACE ELECTRONIC CHARACTERISTICS
在GaAs上用电子束蒸发淀积LaB_6薄膜及其界面的电学特性收藏指正
4.In In 2O 3:Mo(IMO) thin film prepared by conventional thermal reactive evaporation, the valence difference of 3 between Mo 6+ and In 3+ was much bigger than those in other TCO films such as In 2O 3:Sn, SnO 2:F and ZnO:Al.
采用反应蒸发法制备的掺钼氧化铟(In2 O3:Mo,简称 IMO)薄膜中 ,Mo6 +与 In3+的化合价态相差 3,远大于广泛研究和应用的 TCO薄膜材料 In2 O3:Sn、Sn O2 :F和 Zn O:Al中的价态差。收藏指正
5.The diffusion welding behavior of single-crystalline Cu to single-crystalline α-AIO with a Nb film interlayer and the joint microstructure properties were studied by TEM,SEM/EDS analyses and four-point bend testing.The Nb film interlayer deposited by electron beam evaporation on the ceramic side prior to diffusion welding was found to be olycrytalline and fiber-textured after diffusion bonding,with the close-packed plane(110)being parallel to the (0001)basal plane of α-AIO.
扩散连接技术是一门边缘科学,涉及材料、扩散、相变、界面反应、接头应力应变等各种行为,工艺参数多,虽然已经进行了大量的试验研究,但却对各种材料的连接机理尚未有明确的认识,为此人们试图借助于计算技术,对接头行为进行数值模拟,以便找到共同规律,对扩散连接过程及质量进行预测与实时控制。收藏指正
6.Evaporation of Amur Silver Grass Black Liquor in Long-Tube Rising-Film Evaporators
长管升膜蒸发器用于荻浆黑液的蒸发收藏指正
7.A novel transparent conductive film,In 2O 3∶Mo(IMO) has been grown by conventional thermal reactive evaporation of MoO 3,which has a very high vapor pressure.
MoO3的饱和蒸气压较高 ,可以直接用热反应蒸发法制备In2 O3∶Mo(IMO)透明导电薄膜。收藏指正
8.Numerical Simulation on Evaporation Process and the Development of CAD System for Thin Film Evaporator
薄膜蒸发蒸发过程数值模拟及其CAD系统开发收藏指正
9.Application and technology essentials of vacuum evaporation film used in high power helix TWT are summarized.
摘要就真空蒸发镀膜在大功率螺旋线行波管上的应用、工艺要点进行了总结。收藏指正
10.The high quality transparent conductive thin film In 2O 3∶Mo(IMO) can be prepared by normal thermal reactive evaporation. The electrical resistivity as low as 1.7×10 -4 Ω·cm was obtained, and the average total visible light transmittance of the IMO film with the glass substrate was over 80%.
用反应蒸发法制备的掺钼氧化铟 ( In2 O3:Mo,IMO)薄膜在可见光区域的平均透射率 (含 1 .2 mm厚玻璃基底 )超过 80 % ,电阻率最低达 1 .7× 1 0 - 4Ω·cm。收藏指正
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