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1.Sputtered Glass Waveguide on the Thermally Grown SiO_2 Thin Film
SiO_2薄膜上的溅射玻璃平面光波导收藏指正
2.Studyinq the Liquid-Grown Silicon Oxide Film Surfaces and Interfaces by Auger Etectron Energy Spectryscopy
硅表面液相钝化膜及其界面的俄歇能谱研究收藏指正
3.Raman scattering of CN thin film grown using arc plasma
碳氮薄膜的制备及其拉曼光谱研究收藏指正
4.Microstructure of Low-Temperature Pseudo- Homoepitaxial Silicon Film Grown by RLH/VLP-CVD
RLH/VLP-CVD低温赝同质外延硅膜微结构(英文)收藏指正
5.ANALYSIS OF THE MORPHOLOGIES OF DIAMOND FILM GROWN BY MICROWAVE PLASMA CVD METHOD
微波等离子体化学气相沉积金刚石薄膜形貌分析收藏指正
6.The growing condition and raw materials mole-ratio were studied and then obtained. Afterwards, on the substrate of bulk crystal (TbYbBi)_3Fe_5O_(12) directed in (110), bismuth-substituted RE iron garnet TbBiGaIG film was grown by the LPE method using PbO as flux. The film structure and growth condition were studied by XRD and SEM.
然后,以沿(110)定向的(TbYbBi)_3Fe_5O_(12)块状晶体为基底,以PbO为助熔剂采用液相外延(LPE)方法生长掺Bi稀土铁石榴石单晶薄膜TbBiGaIG,制备了TbBiGaIG薄膜/TbYbBiIG晶体复合结构,用XRD,SEM等测试分析了薄膜定向生长情况。收藏指正
7.Aluminum film was grown on modified fluorinated polymer composite films by rf magnetron sputtering.
摘要采用射频磁控溅射技术在改性氟塑料表面沉积铝层，制备了金属／氟化高聚物复合薄膜。收藏指正
8.Al_2O_3 Film Grown by CVD and the Interface Characteristics of Al_2O_3-InP and Al_2O_3-Si
CVD法淀积Al_2O_3膜及其与InP、Si的界面性质收藏指正
9.At last the monocrystal film CeO_2(111) grown on silicon (100) was deposited at 400℃.
在 4 0 0℃时 ,制备了CeO2 ( 111) /Si( 10 0 )单晶薄膜。收藏指正
10.The BaTiO-3 thin film was grown epitaxially on SrTiO-3(001) substrate by laser molecular beam epitaxy (laser|MBE). The film growth process was monitored by \%in situ\% reflection high|energy electron diffraction (RHEED), the regular RHEED intensity oscillation from the 0th|Bragg reflection shows an unit cell layer|by|layer growth mode.
用激光分子束外延技术在SrTiO3 (0 0 1)衬底上外延生长了高质量的BaTiO3 薄膜 ,薄膜的生长过程由反射式高能电子衍射仪 (RHEED)原位实时监测 ,表明薄膜具有二维层状生长模式 .收藏指正
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