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1.The abrupt heterojunction diode is composed of a 1 m thick heavily doped n-type SiC layer and a 0.4 m thick lightly doped p-type SiC1-xGex layer with varied composition ratios.
在这个异质结中，N型重掺杂3C-SiC层的厚度为1μm，P型轻掺杂SiCGe层厚度为0.4μm，二者之间形成突变异质结。收藏指正
2.The 950nm Emission from InGaAsP/InP Double Heterojunction Laser Diode and Auger Recombination
InGaAsP/InP双异质结激光器发射的0.95μm发光带和俄歇复合收藏指正
3.Temperature Dependence of Gain Spectra, Threshold Current and Auger Recombination in InGaAsP/InP Double Heterojunction Laser Diode
InGaAsP/InP双异质结激光器中的增益光谱,阈值电流的温度特性及俄歇复合收藏指正
4.A PROPOSAL OF DOUBLE HETEROJUNCTION DOUBLE DRIFT-REGION InP/InGaAsP/InP AVALANCHE DIODE
双异质结双漂移区InP/InGaAsP/InP微波雪崩二极管的设想收藏指正
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