爱词霸英语   汉语   手机版   软件版下载 | English
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1.All the films have the same indirect transition bandgap, but those with one time dip have no indirect transition.
除浸渍一次的膜不存在间接跃迁外,所有的膜具有相同的间接跃迁禁带宽。收藏指正
2.Theory of Semiconductor、Absorption、Direct transitionIndirect Transition、Emission、Radiation Recombination、Iradiation Recombination、Donor、Acceptor、Exciton、Phonon、Photon、Polarition.
半导体基本原理、吸收、直接跃迁、间接跃迁、辐射、发光复合、非发光复合、施子、受子、激子、声子、光子、恒化子。收藏指正
3.It is affirmed that the absorption edge below 4.0eV is attributable to indirect transition.
并通过对晶体a~(1/2)~hv曲线的研究,肯定了4.0eV以下吸收边的间接跃迁性质;收藏指正
4.The types and Debye temperatures of the phonons participating in the indirect transition have also been determined.
此外,还得到了参予带际间接光学跃迁的六种声子的类型和德拜温度.收藏指正
5.The absorption edge below 3 5eV is attributable to indirect transition by studing the ?α 1/2 hν? curve.
并通过对α1/2—hν曲线特征的研究,肯定了3.5eV以下吸收边的间接跃迁性质;收藏指正
6.It is affirmed that the absorption edge below 4. 0 eV is attributable to indirect transition,the significant discussion of three straight-line parts of spectral line are obtained by studing the curve of LiNbO3. The energy gap E, is 3. 38eV.
通过对晶体a~(1/2)-hv曲线的研究,肯定了40.eV以下吸收边的间接跃迁性质,并讨论了三段直线的意义。 确定了禁带宽度E_f的值为3.38eV。收藏指正
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