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1.Interface Reaction of TiC Particle Reinforced Titanium Composites
TiC颗粒强化钛基复合材料的界面反应收藏指正
2.THE STUDY OF INTERFACE REACTION OF Ti/SiO_2 DURING RTA TREATMENT
Ti/SiO_2界面反应的研究收藏指正
3.A STUDY OF Ti/Al_2O_3 INTERFACE REACTION BY AUGER ELECTRON ENERGY SPECTROSCOPY
Ti/Al_2O_3界面反应的俄歇电子能谱研究收藏指正
4.The paper relates to the study of interface reaction and reaction products between WCp and Fe?Ni steel matrix. The effect of WCp size on interface morphology was investigated.
研究了离心铸造条件下，WCp与Fe－Ni钢基体之间的界面反应及反应产物，考察了WCp尺寸对界面形态的影响。收藏指正
5.It is found that at room temperature, the product of Al-GaAs(100) interface reaction is AlAs.
结果判定了室温下Al-GaAs(100)界面生成的为AlAs。收藏指正
6.Most of the interfaces between ZrO2 and Ni components in the FGM are directly connected and no interface reaction has been detected.
结果表明，组元Ni和ZrO_2，以直接结合为主，无明显界面反应。收藏指正
7.The interfacial structures which are formed due to the reaction of Al 2O 3 and Cu-Ti liquid alloy are observed and analyzed by means of SEM, EPMA and XRD. Thermodynamics of the interface reaction is also discussed.
用扫描电镜 (SEM )、电子探针(EPMA)和X射线衍射仪 (SRD)对Ti-Cu液态合金与Al2 O3 陶瓷反应形成的界面结构进行了观察和分析 ,对界面反应的热力学进行了讨论。收藏指正
8.The results show that the SiCp/Al composites with high compactness can be prepared by re-hot pressing due to effectively controlling the severe harmful interface reaction in rapid heating.
结果表明,二次热压变形法能有效抑制剧烈的界面反应,得到高致密的SiCp/Al复合材料。收藏指正
9.If we can pie-immobilize sonic osterblast-favouite bioactive factors on theimplant surface, then we can make the interface reaction under control, and, thebioactivity of the materials will be improved to a new level.
将促进成骨细胞附着和功能表达的活性因子预先固定在材料表面，对表面生物反应进行有效控制，这样就可以对种植体-骨组织结合界面进行特异性调控，提高材料的生物活性。收藏指正
10.After deposition of a layer of super-thin A film on a clean disordered GaAs surface, the Al/GaAs interface reaction is studied by XPS. The results show that the Al atom can penetrate into GaAs substrate to form AlAs with freed Ga left on GaAs substrate surface by Al-Ga replacement reaction. A Ga/AlAs + GaAs/GaAs three layer model is proposed.
用XPS研究了清洁无序GaAs表面沉积超薄Al膜后的界面反应,结果表明,原沉积于GaAs表面的Al能进入GaAs衬底取代Ga形成AlAs,而通过Al-Ga替位反应释放出来的Ga则残留在衬底表面,提出了Ga/AlAs+GaAs/GaAs三层结构模型。收藏指正
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