3.The Gray-Brown method has been performed to measure Si/SiO_2 interfacestate density D(?) near conduct and valence band, also the average interfacestate density Dit.
4.Discussion shows that the barrier height of Sn/Au HgCdTe contact is pinned at "Bardeen limit" and the interfacestate density is one magnitude higher than that of the dielectric film HgCdTe interface.
5.The analytical model which comprises the temperature compensation for the SiC MOSFET is modified by considering the Gauss model of interfacestate density and the Poole-Frenkel effect.
6.It shows that the bias in the post-irradiation recovery period and the ratio of the interfacestate to the electron tunneling influence the recovery rate.
7.The experimental results indicated that under 77°K radiation,the induced oxide charge in n-chan-nel MOSFETs was more evident than at room temperature and the increase of radiation induced interfacestate at 77°K was about 20% of that at room temperature.
8.The results show that treating the surface of plant fiber with styrene acrylic acid latex can improve effectively the fiber matrix interface binding state of plant fiber gypsum composites, and a remarkable increase in its mechanical properties can be obtained.
10.The best process is that Zr is oxidized in a NaCO3 melt for half and an hour. SEM、EPMA、XAFS、XPS、HRTEM were adapted to investigate the topography, chemical composition, interface structure, oxidation state of Zr of Zr/ZrO2 electrode.
