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1.Specific Electronic Circuit Design of Functional Chips for Bloch Line Memory
Bloch线存储功能芯片专用电路设计收藏指正
2.A program that transfers data from off-line memory into internal storage.
装入把数据从离线存储器调入内存的程序收藏指正
3.The Present State and Perspective for the Phys of Magnetic Domain Walls and the Bloch Line Memory
磁畴壁物理和布洛赫线存贮器研究现状和前景收藏指正
4.The ultra-high-density Bloch line memory (BLM) uses negative vertical-Bloch-line (VBL) pairs in the walls of hard domains as information carriers. It is important to investigate the stability of the vertical-Bloch-lines for developing the BLM and enriching the theory of Magnetic domain walls.
超高密度固态布洛赫线存储器(BLM)是以硬磁畴畴壁中垂直布洛赫线(VBLs)作为信息载体，硬磁畴畴壁中VBLs产生及其稳定性的研究对超高密度布洛赫线存储器的研制和磁畴壁物理的发展都是非常重要的。收藏指正
5.Konish proposed the ultra-high-density Bloch line memory (BLM) scheme based on the magnetic bubble storage technology in 1983. Negative vertical Bloch line (VBL) pairs in the walls of stripe domains aligned in parallel are used as information carriers in BLM in which the presence and absence of VBL is represented by "1" and "0", respectively.
1983年，Konish提出了超高密度布洛赫线存储器(BLM)方案。 BLM存储技术采用条状磁畴中的负布洛赫线(VBL)对作为信息的载体，以VBL对的有无来体现信息的“1”和“0”。收藏指正
6.A device for converting energy form one form to another. In relation to computers, the term is applied to a read/write head, to detector of sector marks in a magnetic disc system, and to electronic/sonic pulse converters of delay line memory.
把能量从一种形式转换成另一种形式的装置。在与计算机有关时，这个术语用在磁盘系统中的读／写磁头、扇面标记的检测上，以及用在延迟线存储器的电子或声波脉冲变换器上。收藏指正
7.The designers of “Line-Memory-Changing” won the 9th International Landscape Architecture Student Design Contest of China, Japan and South Korea in 2006. The theme of the design resulted from the analysis of the historical and cultural background of Nagasaki.
介绍了2006年中日韩园林设计大赛的获奖作品“线—记忆--变迁”的主题思想和主要设计内容。 方案以日本长崎作为设计对象,通过分析其历史、文化背景,结引出主题,再从景观设计、植物造景等方面入手,对这块场地进行重新布局和设计。收藏指正
8.What do you make of the On-line vs. Memory-Based debate?
你如何看待凭记忆辩论相对于线上辨论？收藏指正
9.The shape and character of the zero line, an important criterion for magnetic memory testing of the normal field is analyzed under different longitudinal magnetization.
研究了管件处于外部弱磁场的缺陷段的位置对表面磁场法向分量零值线分布的影响。收藏指正
10.The wavelet coefficients are computed on a line by line basis and the entire wavelet coefficients are stored in internal memory.
逐行计算小波系数，然后把全部小波系数储存在内部存储器上。收藏指正
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