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1.According to the value of energy difference between Ga3d core level and the valence band maximum of GaAs precisely determined by Kraut et al. , the position of Fermi level with respect to the valence band maximum at the surface and the surface band bending of clean GaAs(111) can be determined by measuring the exact binding energy of Ga3d level in the UPS experiment.
根据Kraut等用XPS精确测定的GaAs中Ga3d芯能级到价带顶的能量差,在UPS实验中,由测定的Ga3d结合能数据,得出了清洁GaAs(111)的费米能级在表面处的位置,也即求得了表面的能带弯曲.收藏指正
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