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1.Metal-insulator-metal junctions have been constructed by sandwiching chemisorbed protein molecules between a conducting AFM tip and the conducting substrate.
本文还研究了相应的蛋白质电子传递理论,通过综合讨论有机单分子层电子传递的理论方法及其最新进展,根据在导电原子力显微镜针尖和传导基底中间夹入化学吸附的蛋白质来构造金属-绝缘体-金属结,在限定的偏压范围-1~1V内,可以观察到不对称电流曲线。收藏指正
2.metal-insulator transitions
金属－绝缘体转变收藏指正
3.Field Emission from “Metal/Insulator”
金属/绝缘体的场致发射收藏指正
4.Theoretical analysis of gate control characteristics of the 2-DEG has been developedfor both MISS (metal-insulator-AlGaAs-GaAs) and MES (metal-AlGaAs-GaAs) structures.
本文对MISS(金属-绝缘层-AlGaAs-GaAs)和MES(金属-AlGaAs-GaAs)结构异质结中二维电子气的栅控特性做了系统的理论分析.收藏指正
5.X-ray Diffraction Study of Metal-Insulator Transitions in (V_(1-x) Cr_x)_2O_3 Systems
陶瓷(V_(1-x)Cr_x)_2O_3系统中金属—绝缘体相变的X射线衍射研究收藏指正
6.THE INSULATOR METAL TRANSITION AND CMR EFFECT IN La_(2/3)Ca_(1/3)MnO_3
La_(2/3)Ca_(1/3)MnO_3中绝缘体金属相变与CMR效应收藏指正
7.INSULATOR-METAL TRANSITION OF THE THE 2- D HALF- FILLED HUBBARD MODEL AT FI- NITE- TEMPERATURES
二维半充满Hubbard模型有限温度下绝缘体──金属相变的研究收藏指正
8.In order to study electric-field effects in La_(0.8)Ca_(0.2)MnO_3(LCMO) CMR film, an inverted metal-insulator-CMR field-effect transistor(CMR-FET) structure was chosen.
这种背栅(back gate)场效应晶体管结构与常规的顶栅(top gate)的最大区别是,巨磁阻膜生长在PbZr_(0.2)Ti_(0.8)O_3 (PZT)上面。收藏指正
9.The metal-insulator (M-I) transition in (V_(1-x)Cr_x)_2O_3 ceramic samples wasstudied by X-ray diffraction technique at room temperature and in the range 29℃to 207℃.
本文讨论在常温和29～207℃温区内用 X 射线衍射技术研究(V_(1-x)Cr_x)_2O_3陶瓷样品中的金属—绝缘体(M—I)相变。收藏指正
10.Based on the sharp resistance change near the metal|insulator transition (M|I) of the colossal magnetoresistance (CMR) materials, we design and test a new type CMR bolometer.
基于超巨磁阻 (CMR)材料在金属 绝缘体 (M I)转变点附近的巨大电阻变化 ,设计并测试了一种新型超巨磁阻测辐射热仪 (CMRbolometer) .收藏指正
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