metal semiconductor metal
1.An 850nm monolithically integrated optical receiver front end is developed with a 0.5μm GaAs PHEMT process,which comprises a metal-semiconductor-metal(MSM)photodetector and a distributed amplifier.
2.Lateral Schottky diodes have been formed by a electrical breakdown of the right Schottky barrier of metal-semiconductor-metal(MSM) ultraviolet photodetector which has been fabricated on undoped(n-Al_(0.3)Ga_(0.7)N) grown by metalorganic chemical vapor deposition(MOCVD).
3.XPS results reveal that there is a metal-semiconductor interaction (MScI) between active metal Ni and semiconductor oxide,which is the most important factor leads to the above phenomenon.
5.THE n-TYPE METAL-SEMICONDUCTOR In/Nb-SrTiO_-3 SCHOTTKY BARRIER DIODES
7.Field effect transistors or unipolar transistors are used to manufacture P-type metal-oxide semiconductor (PMOS), N-type metal-oxide semiconductor (NMOS) and complementary metal-oxide semiconductor (CMOS) devices.
8.The entire process of building a sound chip is fully compatible with the standard industry process for semiconductor manufacturing, called complementary metal oxide semiconductor, or CMOS.
9.FPGAs rely on the ubiquitous transistor-based technology called complementary metal oxide semiconductor (CMOS).
10.The agreement includes Complementary Metal Oxide Semiconductor (CMOS) and Silicon-on-Insulator (SOI) technologies as well as advanced semiconductor research and design enablement transitioning at the 45-nanometer generation.
