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1.Sub-micron Poly-Si (with strong light reflectivity) pattern obtained by using BARC (Bottom anti-reflective coating) process that degrades the wafer surface steps height, and weakens standing wave effect. Thus, fine pattern is obtained and it increases in the device yield by 6%~7%.
在表面强反射膜-多晶硅上进行亚微米光刻时,采用有机BARC(BottomAnti-ReflectiveCoating)工艺,降低了晶片表面的台阶高度,并有效地抑制了驻效应,获得良好的光刻图形,从而使产品良率提高了6%~7%。收藏指正
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