multilayer mirror
2.The absolute absorptance of a 0° Ta_2O_5/SiO_2 multilayer mirror prepared by the ion beam sputtering(IBS) technique was as low as(1.08×10~(-5),) and the absorptance of a 45° HfO_2/SiO_2 multilayer mirror prepared by the ion-assisted deposition(IAD) technique was(6.83×10~(-5),) respectively.
3.Xenon is a promising target material in Extreme Ultraviolet Lithography(EUVL) for its high EUV intensity in 13~14 nm and no condensation on multilayer mirror surfaces due to chemical inert,and therefore a Laser Produced Plasms(LPP) source with liquid aerosol spray target is designed and developed in this paper.
