native substrate
1.substrate, avery thin and high-doped layer with a peak carrier concentration of 0.5-1×10~(13)cm~(-2)and a thickness less than 0.1μm is formed for FET channel as well as for source/drainlayer,between Al gate and GaAs active layer,there is an anodized native oxide layerwith a thickness less than 10~2 A.
