negative carrier
2.Based on the hydrodynamic energy transport model,the influence of variation of negative junction depth caused by concave depth on the characteristics of deep-sub-micron PMOSFET has been studied.The results are explained by the interior physical mechanism and compared with that caused by the source/drain depth.Research results indicate that with the increase of negative junction depth(due to the increase of groove depth),the threshold voltage increases,the sub-threshold characteristics and the drain current driving capability degrade,and the hot carrier immunity becomes better in deep-sub-micron PMOSFET.The short-channel-effect suppression and hot-carrier-effect immunity are better,while the degradation of drain current driving ability is smaller than those with the increase of depth of negative junction caused by source/drain junction shallow.So the variation of concave depth is of great advantage to improve the characteristics of grooved-gate MOSFET.
