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1.4-8 GHz Octave Bandwidth GaAs FET VCO
4～8GHz倍频程GaAs FET VCO收藏指正
2.Within the multi-octave bandwidth from 1 to 18 GHz, the average DSB noise figure is 6 dB, and the maximum DSB noise figure is 8.7 dB, and both LO-RF and LO-IF isolations are more than 15 dB.
在1—18GHz工作频率范围内,最大双边带噪声系数为8.7dB,平均双边带噪声系数约6dB; 本振端一信号端、本振端一中频端隔离度均大于15dB。收藏指正
3.Under the conditions of an octave bandwidth and 1.5dB nonuniformity within the passbend, the total number of traneducers can be 13 for the second stage device while it is 15 for the first one under same conditions. Thus, the relative AO inter-action length is only 14% less.
设计结果表明，在倍频程带宽和通带内超声损耗不均匀性小于1．5dB的条件下，第二级TeO＿2器件的最大换能片总数可取至13，而相同条件下的第一级器件最大换能片总数为15．相对声光互作用长度较第一级器件仅降低14％。收藏指正
4.According to this analysis, we have developed a sample device that is 3.4-15GHz multi-octave magnetically tunable bandpass filter. The insertion-loss is less than 3dB generally. The 3db bandwidth is about 60 MHz and the isolation is over 60 dB.
据此研制子3.4——15GHz的样品,其插损一般小于3dB,三分贝带宽为60MHz,隔离度大于6CdB。收藏指正
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