oxide semiconductor
2.Field effect transistors or unipolar transistors are used to manufacture P-type metal-oxide semiconductor (PMOS), N-type metal-oxide semiconductor (NMOS) and complementary metal-oxide semiconductor (CMOS) devices.
3.FPGAs rely on the ubiquitous transistor-based technology called complementary metal oxide semiconductor (CMOS).
4.The entire process of building a sound chip is fully compatible with the standard industry process for semiconductor manufacturing, called complementary metal oxide semiconductor, or CMOS.
5.The agreement includes Complementary Metal Oxide Semiconductor (CMOS) and Silicon-on-Insulator (SOI) technologies as well as advanced semiconductor research and design enablement transitioning at the 45-nanometer generation.
6.SnO_2 is a wide-band oxide semiconductor with a bandwidth of 3.6~4.0eV and a tetragonal rutile crystal structure.
7.second, the spectre model of the best varactor-accumulation mode Metal-Oxide-Semiconductor (MOS) varactor, is modeled with ICCAP (a type of software);
8.The measuring technique and results of sub-pixel measurement accuracy of complementary metal oxide semiconductor (CMOS) imager are researched in this paper in order to give references for correlative systems.
9.This paper presents a novel efficient charge pump composed of low Vth metal-)oxide-)semiconductor (MOS) field effect transistors (FET) in the course of realizing radio frequency (RF) energy AC/DC conversion.
10.The perspective of micro/nano scale monolithic integration of optical devices and electronic devices on a single chip by standard complementary mental oxide semiconductor (CMOS) technologies is also presented.
