2.A polysilicon film has been successfully deposited on a quartz substrate with thereaction of SiH_4 decomposition induced by a CW CO_2 laser. Its Raman shift indicatesthat the crystallite size increases when the inducing reaction lasts.
3.1. ZnO film is developed on silicon(100) and quartz substrates using Sol-Gel technology. X-Ray Diffraction(abbreviated as XRD) result shows that all the films is in the structure of hexagonal wurtzite.
