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1.Analysis of Semiconductor Film with RHEED
用RHEED方法分析半导体薄膜特性收藏指正
2.In the paper, the newest methods for syntyesing diamend film, Cubic BN film,superconductor film and semiconductor film at home and abroad are introduced.
本文主要介绍国内外激光技术在合成金刚石薄膜、立方氮化硼薄膜、超导薄膜、半导体薄膜等的最新方法.收藏指正
3.The regression analysis of 1n(iph), (U-Ufb )1/2 for an amorphous semiconductor film on iron surface indicated that NaNO2 affected the anodic behavior of armco-iron by changing the ionization energy of the localization state of amorphous semiconductor film.
根据1n(iph)与(U-Ufb)1/2的回归分析发现,阳极表面都为无定形膜,NaNO2是通过改变阳极表面膜定域态的电离能来影响工业纯铁阳极行为的。收藏指正
4.Support vector regression modei for controlling the thickness of semiconductor In_2O_3 film
氧化铟半导体薄膜厚度控制的支持向量回归模型收藏指正
5.Dielectric Thin Film Deposition by ECR Plasma CVD for Semiconductor Optoelectronic Devices
ECR Plasma CVD法淀积介质膜技术在半导体光电器件中的应用收藏指正
6.An ultrathin Pd film is synthesized on semiconductor support by photocatalytic method.
由光催化沈积可在半导体载体上制备超薄钯膜。收藏指正
7.The following text is about the newly-developed crystall membrane iodine ion sensitive semiconductor device in which Si3N4 /SiO2 is used as the insulator film and AgI-Ag2S as sensitive film and includes an analysis of its mechanism of the sensitivity.
本文报导以Si_3N_4/SiO_4为绝缘膜,用AgI-Ag_2S晶体为敏感膜的碘离子敏感半导体器件,并对其敏感机理进行了分析.收藏指正
8.Mott-Shottky plot analysis further demonstrated that the oxide film was a n-type semiconductor and the higher donor density under high potential further indicated the existence of Cl~- in the film.
Mott—Schotthy曲线结果表明,该氧化物膜为n型半导体具有一定的保护作用,但是在高电位下载流子密度的增加说明了膜中有Cl~-离子的渗透。收藏指正
9.The Seebeck coefficient measurement analysis indicated that Bi2-xTe3+x film have N-type semiconductor characteristic.
温差电性能测试分析表明,Bi_(2-x)Te_(3+x)薄膜材料具有半导体特性,塞贝克系数不随温度变化。收藏指正
10.The XPS analysis indicates that the stoichiometric excess of CSN in both solutions shows that the CuSCN thin film deposited on ITO glass is ptype semiconductor.
通过XPS分析表明:2种溶剂中制备的CuSCN薄膜均为SCN化学剂量比过量,具有p型半导体特征。收藏指正
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