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1.The Development of a High-Precision,High-Sensitivity DC Amplifier
高精度高灵敏度直流放大器的研制收藏指正
2.Analysis of Sensitivity of S/R Amplifier for LSI Single Transistor Cell MOS DRAM
LSI动态RAM中S/R放大器的检测灵敏度分析收藏指正
3.Its frequency band of main amplifier is 200MHz (3dB), output voltage is about 0.8V and its sensitivity is -39dBm at BER=10~(-9).
其主放带宽为200MHz(3dB),输出电压V_(pp)值为0.8V,接收灵敏度在10~(-9)误码率下为-39dBm。收藏指正
4.The methods for calibration of new BWO frequency,frequency response and sensitivity of the detector are described in this paper. The results of calibration and adjustment of the MSR system are presented. The design circuit of the IF amplifier for this receiver and its measurement results are also presented.
给出了新返波管的频率输出、接收系统的频率响应、灵敏度的校准方法以及MSR调试、校准的结果 ,也给出了中频放大器的结构设计和测试结果收藏指正
5.A monofrequency lock-in amplifier for Auger Electon Spectroscopy has been designed and developed with operation frequency of 6299 Hz, sensitivity=1μV_(FS), minimum detectable signal noise ratio (S/N) = 1/50. The principal technical problems have been discussed in this article.
为俄歇电子谱仪专用而研制的单频锁定放大器,工作频率6299Hz,灵敏度为1 μV_(FS),最小可检信噪比S/N为1/50。收藏指正
6.The design of a late-model PVDF acoustic sensor based on the acoustic emission techniques is described detailedly in this paper,including the operating principle and the structure of the sensor,and the influence of piezo element,backing material,acoustic matching layer and pre-amplifier on the sensitivity,resolution and signal to noise ratio(SNR) of the sensor.
基于声发射技术研制了一种新型PVDF压电传感器。 介绍了声发射传感器的结构、工作原理以及声发射传感器压电元件、背衬材料、声匹配层和前置放大器接口电路设计对传感器灵敏度、分辨率和信噪比的影响。收藏指正
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