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1.The equipment can shift without grades, a device of center lubricating is set in it. This kind of technological process can economize 7% of packing material than vertical wrapping process.
该机采用无级变速。设有中心润滑装置。比起直式包装工艺，可节省包装材料7%。收藏指正
2.The X-Y MOS addressing device is consisted of two MOS shift re- gisters,used mainly for addressing readout of MOS CID image sensors.
X-Y MOS 寻址器由两个 MOS 移位寄存器组成,主要用于 MOS 型 CID 图像传感器的寻址读出。收藏指正
3.And so the business shift of music, of documents, those will all be taking place in the relatively near future, delivered across the Internet to a new kind of device that not only lets you read, but lets you take notes, annotate and traverse the entire world of information.
而且如此那生意变化音乐,文件,那些将会全部是发生在那相对地不久的将来内,递送过对新的类型的装置英特网以致于不但让你读,而且让你拿笔记,注解而且横过数据的整个世界。收藏指正
4.Secondly, the radiation effects of the system of silicon gate Si/SiO2(silicon gate NMOS and PMOS) implanted BF2 are made a deep systematic study. Especially, the relationship between threshold voltage shift (Vth and Vit Vot) in radiated MOS transistor and irradiation dose rate, irradiation dose, irradiation temperature, bias voltage, device structure as well as annealing condition is explored emphatically.
在此基础上，对BF_2~+注入硅栅Si／SiO_2系统低剂量率辐照效应进行了深入系统的研究，着重研究了BF_2~-注入MOS管阈值电压漂移(ΔVth和ΔVit、ΔVot)与辐照剂量率、辐照总剂量、辐照温度、偏置电场、器件结构以及退火条件的依赖关系。收藏指正
5.2D flipping angle correlation spectra of singre crystal have been obtained on MSL-400 NMR speoerorneter using this flipping angle device. 13C chemical shift tensors in typical crystal DGO (2NH3+CH2COO-·2·COOH) are presented.
利用该装置,在MSL-400潜仪上实现了单晶化学位移张量的二维变角相关谱方法测量,获得了典型单晶的DGO(2NH_3~+CH_2COO~-.2.COOH)的~(13)C化学位移张量。收藏指正
6.For the designed AWG device,the shift of the transmission spectrum is about 0.01 nm,which is much less than the wavelength spacing of 0.8 nm,and the variation of crosstalk is also little.
本文所设计的AWG器件的光谱漂移约为0.01 nm,远远小于波长间隔0.8 nm,串扰的变化也很小。收藏指正
7.Abstract: A new approach,gate-capacitance-shift (GCS) approach,is described for compact modeling.This approach is piecewise for various physical effects and comprises the gate-bias-dependent nature of corrections in the nanoscale regime.Additionally,an approximate-analytical solution to the quantum mechanical (QM) effects in polysilicon (poly)-gates is obtained based on the density gradient model.It is then combined with the GCS approach to develop a compact model for these effects.The model results tally well with numerical simulation.Both the model results and simulation results indicate that the QM effects in poly-gates of nanoscale MOSFETs are non-negligible and have an opposite influence on the device characteristics as the poly-depletion (PD) effects do.
文摘:提出了一种新的建立集约模型的方法,即栅电容修正法.此方法考虑了新型效应对栅电压的依赖关系,且可以对各种效应相对独立地建模并分别嵌入模型中.另外,利用该方法和密度梯度模型建立了一个多晶区内量子效应的集约模型.该模型与数值模拟结果吻合.模型结果和模拟结果均表明,多晶区内的量子效应不可忽略,且它对器件特性的影响与多晶耗尽效应相反.收藏指正
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