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1.Investigation of Silicon Gate CMOS Gate Array LSI
硅栅CMOS门阵列LSI的研制收藏指正
2.Single Metal Silicon Gate CMOS Gate Array Design System Galstar
单层布线硅栅CMOS门阵列设计系统Galstar收藏指正
3.Study on Silicon-gate CMOS IC Test Pattern
硅栅CMOS集成电路测试图形的研究收藏指正
4.Investigation and Fabrication of Silicon-Gate CMOS Magnetic Field Sensor
硅栅CMOS磁敏器件的研制收藏指正
5.The Development of the N-channel Silicon Gate 1024 Bit MOS RAM
BD7503硅栅N沟道1024位MOS随机存贮器的研制收藏指正
6.Secondly, the radiation effects of the system of silicon gate Si/SiO2(silicon gate NMOS and PMOS) implanted BF2 are made a deep systematic study. Especially, the relationship between threshold voltage shift (Vth and Vit Vot) in radiated MOS transistor and irradiation dose rate, irradiation dose, irradiation temperature, bias voltage, device structure as well as annealing condition is explored emphatically.
在此基础上，对BF_2~+注入硅栅Si／SiO_2系统低剂量率辐照效应进行了深入系统的研究，着重研究了BF_2~-注入MOS管阈值电压漂移(ΔVth和ΔVit、ΔVot)与辐照剂量率、辐照总剂量、辐照温度、偏置电场、器件结构以及退火条件的依赖关系。收藏指正
7.On the other hand, it is essential to prepare high quality silicon nitride thin film for gate insulator layer of TFT in order to get excellent TFT.
与此同时,制备高质量的栅绝缘层用氮化硅薄膜也是制备高性能薄膜晶体管(TFT)这一课题的需要。收藏指正
8.The development of a high-speed and low-power dissipation SOI CMOS fully-depleted integrated circuit with thin silicon film was presented. A fully-depleted SOI structure with thin silicon film, and the techniques, including high-quality oxidation of the gate, LDD structure, sputtered Ti film silicide , etc, were used to implement SOI CMOS laser range finding device with high-speed and low-power dissipation, which is based on the simulation and testing for the device structure.
在对薄膜全耗尽绝缘硅互补型金属氧化物半导体 (SOICMOS)结构进行模拟和测试基础上 ,采用薄膜全耗尽绝缘硅 (SOI)结构 ,并在工艺中利用优质栅氧化、Ti硅化物、轻掺杂漏 (LDD)结构等关键技术实现了一种高速低功耗SOICMOS激光测距集成电路。收藏指正
9.SCR Silicon Controlled Rectifier -- a three-electrode solid-state device which permits current to flow in one direction only, and does this only when a suitable potential is applied to the third electrode, called the gate.
可控硅整流器可控硅整流器——三电极固态元件，只有当匹配的电压作用于第三电极（选通电极）时，才能够保证电流朝一个方向流动。收藏指正
10.Several electrostatic discharge protection methods used in deep submic ron CMOS IC have been discussed. Their own features are compared. And the operating principle of a gate coupled PMOS triggered/NMOS triggered lateral silicon rectifier ESD circuit is described in details.
详述了目前用于深亚微米CMOSIC的静电放电（ESD）保护方法，比较了它们各自的特点，并详细阐述了栅耦合PMOS触发／NMOS触发横向可控硅（PTLSCR／NTLSCR）ESD保护电路的工作原理。收藏指正
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