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1.the water vapor source over the Plateau comes from the Bay of Bangal and Arabic Sea and its entrance into the Plateau is in the some favorable regions between 85°～95°E.
高原上的水汽来自孟加拉湾和阿拉伯海 ,并且主要从 85°～ 95°E一带中的某些有利地区涌上高原收藏指正
2.A multi-cathode metal vapor vacuum arc ion source
多阴极金属蒸气真空弧离子源收藏指正
3.Chemical vapor deposition of hard diamond-like carbon (DLC) films was achieved using an inductively coupled plasma source (ICPS).
本文采用感应耦合等离子体源(ICPS)成功地实现化学气相沉积硬质类金刚石(DLC)膜,并考察了基片负偏压对类金刚石膜沉积过程和薄膜性质的影响。收藏指正
4.The large area well-aligned carbon nanotube (CNT) arrays were synthesized on porous silicon by electron cyclotron resonance chemical vapor deposition (ECR-CVD) with CH4 and H2 as the source gases, Fe3O4 nanoparticle as the catalyst and without applying electrical field.
本文采用电子回旋共振微波等离子体化学气相沉积方法(ECR-CVD),以CH4和H2为气源、Fe3O4纳米粒子为催化剂,未加电场情况下,在多孔硅基底上制备出大面积阵列碳纳米管。收藏指正
5.Fluorinated amorphous hydrogenated (a-C: F: H) carbon thin films were deposited using radio frequency plasma enhance chemical vapor deposition (RF-PECVD) reactor with CF4 and CH4 as source gases in different RF-power and deposition temperature and they were deal with thermal annealing in a N2 environment.
本文使用CF4和CH4的混和气为源气体. 利用射频等离子体增强化学气相沉积(RF-PECVD)法在不同射频功率和沉积温度下制备了掺氟氢化无定形碳(a-C:F:H)薄膜,并在N2气氛中进行了不同温度的退火处理。收藏指正
6.Amorphous fluorinated carbon (a.-C:F) films with F/C ratios between 0.11 and 0.62 are prepared by microwave electron cyclotron resonance (ECR) plasma chemical vapor deposition (CVD) using trifluromethane (Ct-if3) and benzene (C6H6) as source gases.
用微波电子回旋共振（ECR）等离子体化学气相沉积（CVD）技术和CHF_3、C_6H_6源气体的新组合沉积了F/C比在0.11-0.62之间的氟化非晶碳（α-C:F）薄膜材料。收藏指正
7.a C:F thin films are deposited by microwave electron cyclotron resonance plasma chemical vapor deposition(ECR CVD)using CF 4 and C 6H 6 as source gases.
用苯 (C6H6)和四氟甲烷 (CF4 )混合气体作源气体 ,用微波电子回旋共振等离子体化学气相沉积技术制备了含氟非晶碳膜 (a C :F)。收藏指正
8.Nitrogen doped fluorinated diamond-like carbon(FN-DLC)thin films is deposited using radio frequency plasma enhanced chemical vapor deposition under different radio-frequency power with CF_4,CH_4 and N_2 as source gases.
以CF4,CH4和N2为源气体,采用射频等离子体增强化学气相沉积法,在不同射频功率下制备了含氮氟化类金刚石薄膜样品.收藏指正
9.Fluorinated amorphous carbon films (a C∶F) were deposited by microwave cyclotron resonance plasma chemical vapor deposition (MWECR CVD) using benzene (C 6H 6) and trifluoromethane (CHF 3) as source gases.
用苯 (C6H6)和三氟甲烷 (CHF3 )混合气体作源气体 ,采用永磁微波电子回旋共振等离子体化学气相沉积 (MWECR CVD)技术 ,制备了氟化非晶碳膜 (a C∶F)。收藏指正
10.In this paper,we report the result of diamond like carbon films grown at comparatively low substrate temperature(120 ℃) on Si, Mo and glass substrates by direct photo chemical vapor deposition (CVD) technique. In the process,a microwave excited vacuum ultraviolet(VUV) Xe lamp is used as the light source and the mixture of C 2H 2 and Ar is used as reactive gases.
以微波激励氙（Xe） 发射的真空紫外光（VUV） 作光源，乙炔（C2H2） 作反应气体，采用直接光化学汽相淀积（CVD） 工艺，在硅（Si） 、钼（ Mo） 及玻璃衬底上，120 ℃的低温下进行了类金刚石碳（DLC） 膜的试生长。收藏指正
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