1.Being corrected to void-free state, the Debye temperature of Bi-based materials is estimated as 270±20K. The temperature dependence of Debye temperature for these materials is also calculated and reported for the first time
2.The free of charge replacement of defective parts during the warranty period provided by the Seller shall be void if the Buyer is unable to supply the aforesaid documents.
3.The dislocation free crystal growth based on heavily B doped seeds without Dash necking was introduced. The mechanical properties, the oxygen and the void defects of heavily B doped Czochralski silicon were also discussed.
