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1.Starting from the current-voltage equation given by A. Van der Ziel (1976), a dif-ferential equation of the normalized fluctuation is developed.
从 A. Van der Ziel(1976)提出的电流电压方程出发,导出一个归一化扰动量微分方程。收藏指正
2.The fitting results show that current transporting model for the p-c-BN/p-Si thin film het-erojunctions is the same as current-voltage equation of diode and the donor concentration is 2. 04×1013/cm3 in the c-BN films.
实验结果表明:离子注入掺杂后制备的p-c-BN／p-Si 同型异质结的I-V曲线具有明显的整流特性,其正向导电特性的拟合结果表明,异质结的电流电压方程接近二极管电流电压方程。 计算得到c-BN薄膜层中的受主浓度为 2．04×1013／cm3。收藏指正
3.The complete process of establishing and solving the electric network node voltage equation is introduced in detail in C languag e.The paper provides new source material for computer assistant education of cir cuit course through a practical example run under BC31 environment.
详细地介绍了用C语言建立并求解电网络的节点电压方程的 全过程，并在BC31环境下运行通过，为电路课程的计算机辅助教学提供了新素材。收藏指正
4.In this paper, the electrical characteristics of LDMOS are simulated by a 2-D device simulator MEDICI . Fitting these curves of resistance changing with drain voltage by MATLAB, we get an I-V equation which is available in the whole on-state region, and derive the macromodel of LDMOS circuits.
本文利用二维半导体器件模拟软件MEDICI模拟出LDMOS电阻随着漏源电压变化的曲线,通过MATLAB拟合这些曲线,得到了LDMOS全导通区域的伏安特性方程,建立了LDMOS电路的宏模型。收藏指正
5.The current voltage(I V) characteristics for InGaAs/InAlAs RTD are computed numerically by solving the time dependent Schrodinger equation. The results are good agreement with the experiment.
本文通过数值求解含时Schrodinger方程得到了InGaAs/InAlAs共振隧穿二极管 (RTD)的电流 偏压曲线 ,我们发现数值模拟的结果与实验符合得很好。收藏指正
6.For problems such as deformation, adsorbility, applied voltage and gap between thin beams actuated by electrostatic force in microdevices, a novel coupled electromechanical model of thin beams was deduced according to governing equation of thin plate equation and Laplace electrostatic field equation.
针对微机械器件中普遍使用的微梁在静电力作用下的变形、吸附、电压与间距等设计问题,以平行板电容器为原型,利用弹性力学中的板梁静力学方程和静电场分布的拉普拉斯方程建立了微悬臂梁的机电耦合模型。收藏指正
7.A novel SOI high voltage device with step buried oxide fixed charges(SBOC) is proposed and the breakdown model based on the 2-D Poisson equation is developed.
提出了具有阶梯分布埋氧层固定电荷 (SBOC) SOI新型高压器件 ,并借助求解多区二维泊松方程建立其击穿电压模型 ,对阶梯数 n从 0到∞时的器件击穿特性进行了研究 .收藏指正
8.The equation for transient voltage at the tested line terminal of transformer when applying the lightning impulse test voltage superposed on power-frequency voltage to this terminal is mathematically derived in theory, and the effects of this transient voltage on the main and longitudinal insulation strength of the winding are also discussed.
从理论上用数学方法推导出工频电压叠加冲击电压时受试端子上的电压过渡过程表示式，并从绕组主、纵绝缘强度角度出发，对该表示式提出了一些原则上的看法。收藏指正
9.In aspect of theoretical stud y, the model of high-pressure welding arcs is established, and the governing equation of high-pressure welding arcs and computing equation of voltage drop of arcs are given.
在焊接电弧理论研究方面，建立了高压焊接电弧模型并提出了高压下焊接电弧的控制方程以及电弧电压的计算方程。收藏指正
10.The analytical solutions to 1D Schr?dinger equation (in depth direction) in double-gate (DG) MOSFETs are derived to calculate electron density and threshold voltage.
摘要推导了双栅MOSFET器件在深度方向上薛定谔方程的解析解以求得电子密度和阈电压。收藏指正
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